Search results for "Transition metal oxide"
showing 7 items of 7 documents
Characterization of the defect density states in MoOx for c-Si solar cell applications
2021
Thin layers of MoOx have been deposited by thermal evaporation followed by post-deposition annealing. The density of states distributions of the MoOx films were extracted deconvoluting the absorption spectra, measured by a photothermal deflection spectroscopy setup, including the small polaron contribution. Results revealed a sub-band defect distribution centered 1.1 eV below the conduction band; the amplitude of this distribution was found to increase with post-deposition annealing temperature and film thickness.
Application of 2D Non-Graphene Materials and 2D Oxide Nanostructures for Biosensing Technology
2016
The discovery of graphene and its unique properties has inspired researchers to try to invent other two-dimensional (2D) materials. After considerable research effort, a distinct "beyond graphene" domain has been established, comprising the library of non-graphene 2D materials. It is significant that some 2D non-graphene materials possess solid advantages over their predecessor, such as having a direct band gap, and therefore are highly promising for a number of applications. These applications are not limited to nano- and opto-electronics, but have a strong potential in biosensing technologies, as one example. However, since most of the 2D non-graphene materials have been newly discovered,…
Analysis of Transition Metal Oxides based Heterojunction Solar Cells with S-shaped J-V curves
2020
The use of transition metal oxides for the selective carrier contact in the crystalline silicon solar cells technology is rising to interest for the excellent optoelectrical properties of these materials whose implementation, however, can result in lousy performing cells due to an S-shaped electrical characteristic. In this paper, we fabricated solar cells showing S-shaped J-V curve and carried out an analysis of the reasons of such behavior using a model involving the series of a standard cell equivalent circuit with a Schottky junction in order to explain these atypical performances. A good matching between the experimental measurements and the adopted theoretical model was obtained. The …
Characterization of defect density states in MoOx for c-Si solar cell applications
Layers of MoOx have been deposited by thermal evaporation followed by post-deposition annealing (PDA). The density of states (DOS) distributions of the MoOx films were extracted deconvoluting the absorption spectra, measured by a phothermal deflection spectroscopy setup, including the small polaron contribution. Results revealed a sub-band defect distribution centered 1.1 eV below the conduction band; the amplitude of this distribution was found to increase with PDA temperature and film thickness.
Emergent ultrafast phenomena in correlated oxides and heterostructures
2017
The possibility of investigating the dynamics of solids on timescales faster than the thermalization of the internal degrees of freedom has disclosed novel non-equilibrium phenomena that have no counterpart at equilibrium. Transition metal oxides (TMOs) provide an interesting playground in which the correlations among the charges in the metal $d$-orbitals give rise to a wealth of intriguing electronic and thermodynamic properties involving the spin, charge, lattice and orbital orders. Furthermore, the physical properties of TMOs can be engineered at the atomic level, thus providing the platform to investigate the transport phenomena on timescales of the order of the intrinsic decoherence ti…
Density of States evaluation of Molybdenum Oxide for c-Si solar cell
Silicon-based heterojunction technology (HJT) is one of the most promising candidates for high performance and low cost solar cells with world-record efficiency close to 27% in IBC architecture. The HJT exploits the excellent passivation properties of hydrogenated amorphous silicon (a-Si:H); although, the use of doped a-Si:H has drawbacks such as parasitic absorption and low-thermal budget to cope with back-end metallization. Replacing the p-type a-Si:H with molybdenum oxide (MoOx) is a viable alternative. Optimizing this hole-selective layer is needed; however information on the defect density of states (DOS), linked to oxygen vacancies is still lacking.